Research

Paper

TESTING March 19, 2026

Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation

Authors

Jiaqi Zhou, Sen Zhao, Xiyuan Zhang, Suyu Xiao, Chenxi Fu, Congcong Wang, Yanpeng Li, Weimin Song, Xin Shi

Abstract

This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\sim 10^{-11}$ \si{A/cm^2} at \SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \SI{~130}{V}. CCE for $β$-particles decreases by less than 5\%. The detector maintains good timing resolution: \SI{21}{ps} before and \SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.

Metadata

arXiv ID: 2603.18547
Provider: ARXIV
Primary Category: physics.ins-det
Published: 2026-03-19
Fetched: 2026-03-20 06:02

Related papers

Raw Data (Debug)
{
  "raw_xml": "<entry>\n    <id>http://arxiv.org/abs/2603.18547v1</id>\n    <title>Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation</title>\n    <updated>2026-03-19T07:02:25Z</updated>\n    <link href='https://arxiv.org/abs/2603.18547v1' rel='alternate' type='text/html'/>\n    <link href='https://arxiv.org/pdf/2603.18547v1' rel='related' title='pdf' type='application/pdf'/>\n    <summary>This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \\SI{2}{MGy} (Si) at \\SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \\SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\\sim 10^{-11}$ \\si{A/cm^2} at \\SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \\SI{~130}{V}. CCE for $β$-particles decreases by less than 5\\%. The detector maintains good timing resolution: \\SI{21}{ps} before and \\SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.</summary>\n    <category scheme='http://arxiv.org/schemas/atom' term='physics.ins-det'/>\n    <published>2026-03-19T07:02:25Z</published>\n    <arxiv:primary_category term='physics.ins-det'/>\n    <author>\n      <name>Jiaqi Zhou</name>\n    </author>\n    <author>\n      <name>Sen Zhao</name>\n    </author>\n    <author>\n      <name>Xiyuan Zhang</name>\n    </author>\n    <author>\n      <name>Suyu Xiao</name>\n    </author>\n    <author>\n      <name>Chenxi Fu</name>\n    </author>\n    <author>\n      <name>Congcong Wang</name>\n    </author>\n    <author>\n      <name>Yanpeng Li</name>\n    </author>\n    <author>\n      <name>Weimin Song</name>\n    </author>\n    <author>\n      <name>Xin Shi</name>\n    </author>\n  </entry>"
}