Paper
Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation
Authors
Jiaqi Zhou, Sen Zhao, Xiyuan Zhang, Suyu Xiao, Chenxi Fu, Congcong Wang, Yanpeng Li, Weimin Song, Xin Shi
Abstract
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\sim 10^{-11}$ \si{A/cm^2} at \SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \SI{~130}{V}. CCE for $β$-particles decreases by less than 5\%. The detector maintains good timing resolution: \SI{21}{ps} before and \SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.
Metadata
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Raw Data (Debug)
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"raw_xml": "<entry>\n <id>http://arxiv.org/abs/2603.18547v1</id>\n <title>Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation</title>\n <updated>2026-03-19T07:02:25Z</updated>\n <link href='https://arxiv.org/abs/2603.18547v1' rel='alternate' type='text/html'/>\n <link href='https://arxiv.org/pdf/2603.18547v1' rel='related' title='pdf' type='application/pdf'/>\n <summary>This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \\SI{2}{MGy} (Si) at \\SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \\SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\\sim 10^{-11}$ \\si{A/cm^2} at \\SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \\SI{~130}{V}. CCE for $β$-particles decreases by less than 5\\%. The detector maintains good timing resolution: \\SI{21}{ps} before and \\SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.</summary>\n <category scheme='http://arxiv.org/schemas/atom' term='physics.ins-det'/>\n <published>2026-03-19T07:02:25Z</published>\n <arxiv:primary_category term='physics.ins-det'/>\n <author>\n <name>Jiaqi Zhou</name>\n </author>\n <author>\n <name>Sen Zhao</name>\n </author>\n <author>\n <name>Xiyuan Zhang</name>\n </author>\n <author>\n <name>Suyu Xiao</name>\n </author>\n <author>\n <name>Chenxi Fu</name>\n </author>\n <author>\n <name>Congcong Wang</name>\n </author>\n <author>\n <name>Yanpeng Li</name>\n </author>\n <author>\n <name>Weimin Song</name>\n </author>\n <author>\n <name>Xin Shi</name>\n </author>\n </entry>"
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